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3K7002 CD5338B 2A102 UM400005 MP1X0 2N3015 HT82M AC10EGML
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 60 50 40 Vgs =2.5V
30 Vgs=5V 25 20
Id (A)
Id (A)
30 20 10 0 0 1 2 3 4 5 Vds (Volts) Figure 1: On-Regions Characteristics Vgs =2.0V
15 10 5 0 0.0 0.5 1.0
125C
25C
1.5
2.0
2.5
3.0
Vgs (Volts) Figure 2: Transfer Characteristics
13
1.8 Id=13A
Normalize ON-Resistance
12
Rds(on) (m:)
11 10 9 8 7 0 5 10
Vgs =4.5V
1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Vgs=4.5V Vgs=10V
Vgs =10V
15
20
25
30
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 25 Id=13A
1E+01
1E+00
Rds(on) (m:)
Is (A)
20 15 10 5 25C
125C 25C
125C
1E-01
1E-02 FET+SCHOTTKY 1E-03 0.0 0.2 0.4 0.6 0.8 1.0
0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd (Volts) Figure 6: Body-Diode Characteristics (Note F)
5 Vds=15V 4
10000
Id=13A
Capacitance (pF)
Ciss
Vgs (Volts)
3
1000 Coss FET+SCHOTTKY
2
1 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics
100 Rds(on) limited 10 10ms 1s 1 Tj(max) =150C Ta =25C 0.1 0.1 1 10 10s DC
50 10Ps 100Ps 40
Power (W)
100
1ms 0.1s
Id (A)
30 20 10 0 0.01
0.1
1
10
100
1000
Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T T j,pk =Ta+Pdm.ZTja .RTja RTja =40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence


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